Recombination of Charge Carriers in Semiconductors and its Effect on Lifetime

Authors

  • Аlikulov Мuysin Nortoshevich Head of the Department of Physics and Electronics, candidate of physics and mechanical sciences, (Karshi engineering-economics institute - KEEI)

Keywords:

silicon, generation, recombination, carrier, trap, lifetime, semiconductor

Abstract

This work has researched the recombination processes that occur in semiconductors and its effect on the lifetime of charge carriers. It has been shown that the rate of recombination under external influence depends on the concentration of non-balanced charge carriers. It has been argued that the recombination rate of interbranch radiation is greater in straight-zone semiconductors than in faulty-zone semiconductors, and that the lifetime of electrons and cavities is much larger in straight-zone semiconductors than in straight-zone semiconductors. The reasons why the lifetime of non-primary charge carriers increases with increasing temperature are explained.

References

Bochkaraeva N.I., Rebane Yu.T., Shriter Yu.G. Rost skorosti rekombinasii Shokli-Rida-Xolla v kvantovix yamax InGaN/GaN kak osnovnoy mexanizm padeniya effektivnosti svetodiodov pri visokix urovnyax injeksii. //Fizika i texnika poluprovodnikov, 2015, tom 49, vip. 12, s.1714-1719.

Dyakonov M.I., Kachorovskii V.Y. Nonthreshold Auger recombination in quantum wells //Phys.Rev. B.American Physical Society, 1994. Vol. 49. №24. P.17130-17138.

Krishnamurthy S.,Berding M.A. Yu.Z.G. Minority carrier lifetimes in HgCdTe alloys// J/Electron. Mater.Springer-Verlag, 2006. Vol.35, №6, P.1369-1378.

Casselman T.N., Petersen P.E. A comparison of the dominant Auger transitions in p-type (Hg, Cd)Te// Solid State Commun. 1980. Vol.33, №6, P.615-619.

Iveland J., Piccardo M.,Martinelly L., Peretti J., ChoiJ.W., Young N., Nakamura S., Speck J.S., Weisbuch C. //Appl.Phus.Lett.,105,052103(2014).

Yakovleva N.I. Mexanizmi Oje-rekombinasii v uzkozonnix poluprovodinokovix strukturax HgCdTe. //Uspexi prikladnoy fiziki, 2018, tom 6, №2, p.130-139.

Yunusov M.S. Fizicheskie yavleniya v kremnii, legirovannom elementami platinovoy gruppi. Toshkent, Fan, 1983, 80 s.

Maxmudov Sh.A. Vliyanie primesi medi na elektrofizicheskie i rekombinasionnie svoystva kremniya pri termo- i radiasionnom vozdeystvii. //Diss… k.f-.m.n. Tashkent, 2012 p.1269.

Alikulov M.N. The effect of recombination processes on the photosensitivity of semiconductor colar cells. Journal of Critical Reviews vol 7. 2020 pp. 66-69.

Alikulov M.N. Zonalararo rekombinasiya tezligining yarim o‘tkazgichlar zonalarining tuzilishiga bog‘liqligi. Journal of “Innovasion texnologiyalar” №3, Karshi 2020, p.36-39.

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Published

2022-06-16

How to Cite

Nortoshevich А. М. . (2022). Recombination of Charge Carriers in Semiconductors and its Effect on Lifetime. European Multidisciplinary Journal of Modern Science, 7, 288–295. Retrieved from https://emjms.academicjournal.io/index.php/emjms/article/view/596